TRANSPORT PROCESSES IN AMORPHOUS CR2O3 FILMS

被引：5

作者：

BARBE, DF

HERMAN, DS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 07期

关键词：

D O I：

10.1063/1.1659372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3116 / &

共 15 条

[1] SWITCHING PHENOMENA IN TITANIUM OXIDE THIN FILMS [J].

ARGALL, F .

SOLID-STATE ELECTRONICS, 1968, 11 (05) :535-&

[2] FILMS OF SILICON NITRIDE-SILICON DIOXIDE MIXTURES [J].

CHU, TL ;

SZEDON, JR ;

LEE, CH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :318-&

[3] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].

COHEN, MH ;

FRITZSCHE, H ;

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1065-+

[4] BAND STRUCTURE AND ELECTRICAL CONDUCTIVITY OF NIO [J].

FEINLEIB, J ;

ADLER, D .

PHYSICAL REVIEW LETTERS, 1968, 21 (14) :1010-&

[5] OPTICAL PROPERTIES OF REACTIVELY EVAPORATED CHROMIUM OXIDE FILMS [J].

FRANK, RI ;

MOBERG, WL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1967, 4 (03) :133-&

[6] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].

FROHMANB.D ;

LENZLINGER, M .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+

[7] SWITCHING PROPERTIES OF THIN NIO FILMS [J].

GIBBONS, JF ;

BEADLE, WE .

SOLID-STATE ELECTRONICS, 1964, 7 (11) :785-&

[8] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[9]

HANNAY NB, 1959, SEMICONDUCTORS, P616

[10] 3-DIMENSIONAL POOLE-FRENKEL EFFECT [J].

HARTKE, JL .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4871-&

← 1 2 →