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DETERMINATION OF THE ANGLE OF INCIDENCE IN A CAMECA IMS-4F SIMS INSTRUMENT
被引:55
作者
:
MEURIS, M
论文数:
0
引用数:
0
h-index:
0
MEURIS, M
DEBISSCHOP, P
论文数:
0
引用数:
0
h-index:
0
DEBISSCHOP, P
LECLAIR, JF
论文数:
0
引用数:
0
h-index:
0
LECLAIR, JF
VANDERVORST, W
论文数:
0
引用数:
0
h-index:
0
VANDERVORST, W
机构
:
来源
:
SURFACE AND INTERFACE ANALYSIS
|
1989年
/ 14卷
/ 11期
关键词
:
D O I
:
10.1002/sia.740141110
中图分类号
:
O64 [物理化学(理论化学)、化学物理学];
学科分类号
:
070304 ;
081704 ;
摘要
:
引用
收藏
页码:739 / 743
页数:5
相关论文
共 4 条
[1]
SIMS ANALYSIS OF ALXGA1-XAS GAAS LAYERED STRUCTURES GROWN BY METAL ORGANIC VAPOR-PHASE EPITAXY
[J].
BOUDEWIJN, PR
论文数:
0
引用数:
0
h-index:
0
BOUDEWIJN, PR
;
LEYS, MR
论文数:
0
引用数:
0
h-index:
0
LEYS, MR
;
ROOZEBOOM, F
论文数:
0
引用数:
0
h-index:
0
ROOZEBOOM, F
.
SURFACE AND INTERFACE ANALYSIS,
1986,
9
(1-6)
:303
-308
[2]
SUPPRESSION OF SURFACE-TOPOGRAPHY DEVELOPMENT IN ION-MILLING OF SEMICONDUCTORS
[J].
BULLELIEUWMA, CWT
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Lab, Eindhoven, Neth, Philips Research Lab, Eindhoven, Neth
BULLELIEUWMA, CWT
;
ZALM, PC
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Lab, Eindhoven, Neth, Philips Research Lab, Eindhoven, Neth
ZALM, PC
.
SURFACE AND INTERFACE ANALYSIS,
1987,
10
(04)
:210
-215
[3]
THE INFLUENCE OF BOMBARDMENT CONDITIONS UPON THE SPUTTERING AND SECONDARY ION YIELDS OF SILICON
[J].
MORGAN, AE
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
MORGAN, AE
;
DEGREFTE, HAM
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机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
DEGREFTE, HAM
;
WARMOLTZ, N
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
WARMOLTZ, N
;
WERNER, HW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
WERNER, HW
;
TOLLE, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
TOLLE, HJ
.
APPLIED SURFACE SCIENCE,
1981,
7
(04)
:372
-392
[4]
VANDERVORST W, 1985, APPL SURF SCI, V21, P230, DOI 10.1016/0378-5963(85)90020-0
←
1
→
共 4 条
[1]
SIMS ANALYSIS OF ALXGA1-XAS GAAS LAYERED STRUCTURES GROWN BY METAL ORGANIC VAPOR-PHASE EPITAXY
[J].
BOUDEWIJN, PR
论文数:
0
引用数:
0
h-index:
0
BOUDEWIJN, PR
;
LEYS, MR
论文数:
0
引用数:
0
h-index:
0
LEYS, MR
;
ROOZEBOOM, F
论文数:
0
引用数:
0
h-index:
0
ROOZEBOOM, F
.
SURFACE AND INTERFACE ANALYSIS,
1986,
9
(1-6)
:303
-308
[2]
SUPPRESSION OF SURFACE-TOPOGRAPHY DEVELOPMENT IN ION-MILLING OF SEMICONDUCTORS
[J].
BULLELIEUWMA, CWT
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Lab, Eindhoven, Neth, Philips Research Lab, Eindhoven, Neth
BULLELIEUWMA, CWT
;
ZALM, PC
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Lab, Eindhoven, Neth, Philips Research Lab, Eindhoven, Neth
ZALM, PC
.
SURFACE AND INTERFACE ANALYSIS,
1987,
10
(04)
:210
-215
[3]
THE INFLUENCE OF BOMBARDMENT CONDITIONS UPON THE SPUTTERING AND SECONDARY ION YIELDS OF SILICON
[J].
MORGAN, AE
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
MORGAN, AE
;
DEGREFTE, HAM
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
DEGREFTE, HAM
;
WARMOLTZ, N
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
WARMOLTZ, N
;
WERNER, HW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
WERNER, HW
;
TOLLE, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
TOLLE, HJ
.
APPLIED SURFACE SCIENCE,
1981,
7
(04)
:372
-392
[4]
VANDERVORST W, 1985, APPL SURF SCI, V21, P230, DOI 10.1016/0378-5963(85)90020-0
←
1
→