X-RAY-OBSERVATION OF POROUS-SILICON WETTING

被引：41

作者：

BELLET, D

DOLINO, G

机构：

[1] Laboratoire de Spectrométrie Physique, Université Joseph Fourier (Grenoble I) (URA 08 Associée Au CNRS), 38402 Saint-Martin Heres Cedex

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.50.17162

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-resolution x-ray-diffraction experiments show that the lattice parameter of porous-silicon layers expands when wetted by an alcohol or an alkane. This phenomenon is nearly reversible when the alkane is removed while there is a time-dependent drift during alcohol wetting. The experimental results obtained for several alkanes and for two types of samples (p and p+ type) reveal that the magnitude of the lattice-parameter change is correlated with the size of the nanocrystallites rather than with the nature of the alkane. We propose that the lattice expansion is due to a change of the porous-silicon surface stress induced by wetting. © 1994 The American Physical Society.

引用

页码：17162 / 17165

页数：4

共 32 条

[21] ROLE OF HYDROGEN-ATOMS IN ANODIZED POROUS SILICON
ITO, T
KIYAMA, H
YASUMATSU, T
WATABE, H
HIRAKI, A
[J]. PHYSICA B, 1991, 170 (1-4): : 535 - 539
[22] KOSHIDA N, 1991, APPL PHYS LETT, V60, P347
[23] REVERSIBLE LUMINESCENCE QUENCHING OF POROUS SI BY SOLVENTS
LAUERHAAS, JM
CREDO, GM
HEINRICH, JL
SAILOR, MJ
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1992, 114 (05) : 1911 - 1912
[24] CHEMICALLY-INDUCED SHIFTS IN THE PHOTOLUMINESCENCE SPECTRA OF POROUS SILICON
LI, KH
TSAI, C
SARATHY, J
CAMPBELL, JC
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (24) : 3192 - 3194
[25] EFFECT OF THERMAL ANNEALING AND SURFACE COVERAGE ON POROUS SILICON PHOTOLUMINESCENCE
ROBINSON, MB
DILLON, AC
HAYNES, DR
GEORGE, SM
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (12) : 1414 - 1416
[26] SEREDA PJ, 1967, SOLID GAS INTERFACE
[27] THE SURFACE TENSION OF SOLIDS
SHUTTLEWORTH, R
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1950, 63 (365): : 444 - 457
[28] ANNEALING EFFECT ON LATTICE DISTORTION IN ANODIZED POROUS SILICON LAYERS
SUGIYAMA, H
NITTONO, O
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L2013 - L2016
[29] CHARACTERIZATION OF PHOTOLUMINESCENT POROUS SI BY SMALL-ANGLE SCATTERING OF X-RAYS
VEZIN, V
GOUDEAU, P
NAUDON, A
HALIMAOUI, A
BOMCHIL, G
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (21) : 2625 - 2627
[30] MECHANISMS OF VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON
VIAL, JC
BSIESY, A
GASPARD, F
HERINO, R
LIGEON, M
MULLER, F
ROMESTAIN, R
MACFARLANE, RM
[J]. PHYSICAL REVIEW B, 1992, 45 (24): : 14171 - 14176

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