SINGLE-CRYSTAL GERMANIUM GROWN ON (1102) SAPPHIRE BY MOLECULAR-BEAM EPITAXY

被引：8

作者：

GODBEY, DJ

QADRI, SB

TWIGG, ME

RICHMOND, ED

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 24期

关键词：

D O I：

10.1063/1.101068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2449 / 2451

页数：3

共 15 条

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[6] HIGH-QUALITY HETEROEPITAXIAL GE GROWTH ON (100) SI BY MBE [J].

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[7]

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[8] GERMANIUM FILMS ON SAPPHIRE AND GERMANIUM SUBSTRATES [J].

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[9]

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[10]

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