GERMANIUM FILMS ON SAPPHIRE AND GERMANIUM SUBSTRATES

被引：9

作者：

JOHANNESSEN, JS

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1972年 / 10卷 / 02期

关键词：

D O I：

10.1002/pssa.2210100227

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：569 / +

页数：1

共 18 条

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[2] ANALYSIS OF LATTICE AND IONIZED IMPURITY SCATTERING IN P-TYPE GERMANIUM [J].

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BRAY, R .

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[3] EVAPORATION-CONDENSATION METHOD FOR MAKING GERMANIUM LAYERS FOR TRANSISTOR PURPOSES [J].

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HAIDINGER, W ;

JOCHEMS, PJW ;

TUMMERS, LJ .

SOLID-STATE ELECTRONICS, 1963, 6 (03) :265-&

[4] NON-OHMIC BEHAVIOUR IN AMORPHOUS GERMANIUM AT HIGH ELECTRIC FIELDS [J].

CROITORU, N ;

VESCAN, L .

THIN SOLID FILMS, 1969, 3 (04) :269-&

[5] THE EFFECT OF VACUUM-EVAPORATION PARAMETERS ON THE STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF THIN GERMANIUM FILMS [J].

DAVEY, JE ;

TIERNAN, RJ ;

PANKEY, T ;

MONTGOMERY, MD .

SOLID-STATE ELECTRONICS, 1963, 6 (03) :205-&

[6] EPITAXY OF GERMANIUM FILMS ON GERMANIUM BY VACUUM EVAPORATION [J].

DAVEY, JE .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (03) :1015-&

[7]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[8]

JOHANNESSEN JS, TO BE PUBLISHED

[9]

JONSCHER AK, 1971, VAC SCI TECHNOL, V8, P135

[10] EPITAXIAL DEPOSITION OF GERMANIUM BY BOTH SPUTTERING AND EVAPORATION [J].

KRIKORIAN, E ;

SNEED, RJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3665-+

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