FERMI-LEVEL PINNING AND HEAVILY DOPED OVERLAYERS

被引：8

作者：

MAHOWALD, PH

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575358

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1539 / 1542

页数：4

共 17 条

[1] INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES [J].

CHIARADIA, P ;

KATNANI, AD ;

SANG, HW ;

BAUER, RS .

PHYSICAL REVIEW LETTERS, 1984, 52 (14) :1246-1249

[2] A MOLYBDENIUM SOURCE, GATE AND DRAIN METALLIZATION SYSTEM FOR GAAS-MESFET LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

DEVLIN, WJ ;

WOOD, CEC ;

STALL, R ;

EASTMAN, LF .

SOLID-STATE ELECTRONICS, 1980, 23 (08) :823-829

[3] ELECTRON-ESCAPE DEPTHS IN GERMANIUM [J].

GANT, H ;

MONCH, W .

SURFACE SCIENCE, 1981, 105 (01) :217-224

[4] TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES [J].

HARRISON, WA ;

TERSOFF, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1068-1073

[5] ADSORPTION OF GERMANIUM AND OF OXYGEN ON CLEAVED INP(110) SURFACES - AUGER-ELECTRON SPECTROSCOPY AND MEASUREMENTS OF WORK FUNCTION AND OF SURFACE PHOTOVOLTAGE [J].

KOENDERS, L ;

BARTELS, F ;

ULLRICH, H ;

MONCH, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1107-1115

[6] SCHOTTKY-BARRIER FORMATION ON III-V SEMICONDUCTOR SURFACES - A CRITICAL-EVALUATION [J].

LINDAU, I ;

KENDELEWICZ, T .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1986, 13 (01) :27-55

[7] VALENCE-BAND DISCONTINUITY AT THE GE/INP(110) INTERFACE [J].

MAHOWALD, PH ;

KENDELEWICZ, T ;

BERTNESS, KA ;

MCCANTS, CE ;

WILLIAMS, MD ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1258-1262

[8] CHEMISORPTION-INDUCED DEFECTS ON GAAS(110) SURFACES [J].

MONCH, W ;

GANT, H .

PHYSICAL REVIEW LETTERS, 1982, 48 (07) :512-515

[9]

MONCH W, 1987, PHYS REV LETT, V58, P1360

[10] ON THE FERMI LEVEL PINNING BEHAVIOR OF METAL/III-V SEMICONDUCTOR INTERFACES [J].

NEWMAN, N ;

SPICER, WE ;

KENDELEWICZ, T ;

LINDAU, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :931-938

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