A RUTHERFORD BACKSCATTERING STUDY OF AR-IMPLANTED AND XE-IMPLANTED SILICON-CARBIDE

被引：33

作者：

FOHL, A

EMRICK, RM

CARSTANJEN, HD

机构：

[1] Max-Planck-Institut für Metallforscluing, Institut für Physik, 7000 Stuttgart 80, Heisenbergstr. I

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 65卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)95062-V

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Hexagonal SiC single crystals (oriented <0001>) were implanted with Ar and Xe ions (energies: 50 to 300 keV, fluences: 5 x 10(13) to 10(16) ions/cm2) at 300 K. Rutherford backscattering (RBS) of He-4+ ions was used in combination with ion channeling to measure the implantation and damage profiles and to study the nature, dose dependence and annealing behaviour of the resulting defects. Reasonable agreement is found between the ion ranges and damage distributions and the predictions of TRIM. Full amorphization sets in (starting at the damage peak) at fluences of 8 x 10(14) Ar ions/cm2 and 4 x 10(14) Xe ions/cm2 (for 100 keV ions). Lightly damaged samples show pronounced annealing stages at 290 and 530-degrees-C while heavily damaged samples exhibit little recovery up to 1300-degrees-C. As dechanneling measurements on samples with little damage show, the defects appear to be present mostly in small clusters.

引用

页码：335 / 340

页数：6

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