DEVELOPMENT OF SODIUM CONTAMINATION IN SEMICONDUCTOR OXIDATION ATMOSPHERES AT 1000DEGREESC

被引：6

作者：

MAYO, S

EVANS, WH

机构：

[1] NBS, INST APPL TECHNOL, DIV ELECTR TECHNOL, WASHINGTON, DC 20234 USA

[2] NBS, INST MAT RES, DIV PHYS CHEM, WASHINGTON, DC 20234 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 05期

关键词：

D O I：

10.1149/1.2133406

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：780 / 785

页数：6

相关论文

共 28 条

[1] [Anonymous], COMMUNICATION
[2] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR
AUBUCHON, KG
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +
[3] PREPARATION AND PROPERTIES OF CVD-SILICON TUBES AND BOATS FOR SEMICONDUCTOR-DEVICE TECHNOLOGY
DIETZE, W
HUNT, LP
SAWYER, DH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (08) : 1112 - 1115
[4] DUSHMAN S, 1962, SCI F VACUUM TECHNIQ, P14
[5] FEWER DR, 1966, RADCTR66345 TECH REP, P33
[6] FEWER DR, AD489969 NTIS DOC
[7] PROCESS-CONTROLS FOR RADIATION-HARDENED ALUMINUM GATE BULK SILICON CMOS
GREGORY, BL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2295 - 2302
[8] HETHERIN.G, 1969, ELECTRON ENG, V42, P44
[9] HETHERIN.G, 1969, ELECTRON ENG, V41, P52
[10] THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN THERMAL SIO2
HICKMOTT, TW
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2583 - 2598