EFFECT OF NITRIDATION ON THE DENSITY OF INTERFACE STATES IN W-TI/N-GAAS SCHOTTKY DIODES

被引：5

作者：

CHEN, H ^{[1
]}

SADWICK, LP ^{[1
]}

SOKOLICH, M ^{[1
]}

WANG, KL ^{[1
]}

LARSON, RD ^{[1
]}

CHI, TY ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,DIV MICROWAVE PROD,TORRANCE,CA 90509

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 05期

关键词：

D O I：

10.1116/1.584557

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1096 / 1102

页数：7

共 15 条

[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[2] STUDY OF METAL-SEMICONDUCTOR INTERFACE STATES USING SCHOTTKY CAPACITANCE SPECTROSCOPY [J].

BARRET, C ;

CHEKIR, F ;

VAPAILLE, A .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (12) :2421-2438

[3] INTERFACE STATES IN A CLEAVED METAL-SILICON JUNCTION [J].

BARRET, C ;

VAPAILLE, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4217-4222

[4]

Chapman B., 1980, GLOW DISCHARGE PROCE

[5] CHARACTERIZATION OF INTERFACE STATES AT A AG-SI INTERFACE FROM CAPACITANCE MEASUREMENTS [J].

DENEUVILLE, A .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3079-3084

[6] TIW NITRIDE THERMALLY STABLE SCHOTTKY CONTACTS TO GAAS - CHARACTERIZATION AND APPLICATION TO SELF-ALIGNED GATE FIELD-EFFECT TRANSISTOR FABRICATION [J].

GEISSBERGER, AE ;

SADLER, RA ;

BALZAN, ML ;

CRITES, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06) :1701-1706

[7]

GEISSBERGER AE, 1987, ELECTRON LETT, V23

[8]

HOFFMAN V, 1983, SOLID STATE TECHNOL, V26, P119

[9] HIGH-TEMPERATURE STABLE W/GAAS INTERFACE AND APPLICATION TO METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AND DIGITAL CIRCUITS [J].

JOSEFOWICZ, JY ;

RENSCH, DB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06) :1707-1715

[10] ION-IMPLANTED GAAS P-CHANNEL MESFET WITH SCHOTTKY-BARRIER HEIGHT ENHANCEMENT [J].

LEE, GY ;

BAIER, SM ;

CHUNG, HK ;

FURE, BJ ;

CIRILLO, NC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) :1851-1851

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