HIGH-TEMPERATURE STABLE W/GAAS INTERFACE AND APPLICATION TO METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AND DIGITAL CIRCUITS

[1] BREAKDOWN STABILITY OF GOLD, ALUMINUM, AND TUNGSTEN SCHOTTKY BARRIERS ON GALLIUM-ARSENIDE [J]. ELECTRON DEVICE LETTERS, 1982, 3 (07): : 177 - 179

[2] Boller H., 1964, MONATSH CHEM, V95, P1272

[3] SELF-ALIGNED MESFETS BY A DUAL-LEVEL DOUBLE-LIFT-OFF SUBSTITUTIONAL GATE (DDS) TECHNIQUE FOR HIGH-SPEED LOW-POWER GAAS ICS [J]. ELECTRONICS LETTERS, 1985, 21 (08) : 354 - 356

[4] INVESTIGATION OF REACTIVELY SPUTTERED TUNGSTEN NITRIDE AS HIGH-TEMPERATURE STABLE SCHOTTKY CONTACTS TO GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06): : 3091 - 3094

[5] NEW REPRESENTATIVES OF NBAS2 + ZRAS2 STRUCTURES [J]. NATURE, 1964, 204 (496) : 775 - &

[6] Kanamori M., 1985, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1985 (Cat. No.85CH2182-4), P49

[7] SELF-ALIGNED GATE GAAS IC WITH 4.0-GHZ CLOCK FREQUENCY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (04) : 848 - 850

[8] SELF-ALIGNED SUB-MICRON GATE DIGITAL GAAS INTEGRATED-CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 102 - 104

[9] Maissel, 1983, HDB THIN FILM TECHNO

[10] HIGH-TEMPERATURE STABLE W-GAAS SCHOTTKY-BARRIER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06): : L393 - L395

[1] BREAKDOWN STABILITY OF GOLD, ALUMINUM, AND TUNGSTEN SCHOTTKY BARRIERS ON GALLIUM-ARSENIDE [J]. ELECTRON DEVICE LETTERS, 1982, 3 (07): : 177 - 179

[2] Boller H., 1964, MONATSH CHEM, V95, P1272

[3] SELF-ALIGNED MESFETS BY A DUAL-LEVEL DOUBLE-LIFT-OFF SUBSTITUTIONAL GATE (DDS) TECHNIQUE FOR HIGH-SPEED LOW-POWER GAAS ICS [J]. ELECTRONICS LETTERS, 1985, 21 (08) : 354 - 356

[4] INVESTIGATION OF REACTIVELY SPUTTERED TUNGSTEN NITRIDE AS HIGH-TEMPERATURE STABLE SCHOTTKY CONTACTS TO GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06): : 3091 - 3094

[5] NEW REPRESENTATIVES OF NBAS2 + ZRAS2 STRUCTURES [J]. NATURE, 1964, 204 (496) : 775 - &

[6] Kanamori M., 1985, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1985 (Cat. No.85CH2182-4), P49

[7] SELF-ALIGNED GATE GAAS IC WITH 4.0-GHZ CLOCK FREQUENCY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (04) : 848 - 850

[8] SELF-ALIGNED SUB-MICRON GATE DIGITAL GAAS INTEGRATED-CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 102 - 104

[9] Maissel, 1983, HDB THIN FILM TECHNO

[10] HIGH-TEMPERATURE STABLE W-GAAS SCHOTTKY-BARRIER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06): : L393 - L395