ANALYSIS OF I-V-MEASUREMENTS ON CRSI2-SI SCHOTTKY STRUCTURES IN A WIDE TEMPERATURE-RANGE

Analysis of forward and reverse I-V measurements on CrSi2-Si structures in a wide temperature range (90-350 K) was carried out. The evaluation of Schottky structure parameters, as are the Schottky barrier height PHI(b) and ideality factor n, from experimental I-V characteristics measured in a wide temperature range using the thermionic emission approach, can lead to physically unacceptable values. Therefore a modified approach which takes into account the difference mechanisms of current flow through the rectifying metal-semiconductor interface was used. The activation energy plot was used as a means to evaluate our approach. The importance of tunneling current and its contribution to the total current, especially at higher applied voltages and low temperatures in the reverse direction, was also shown.