POSITRON-LIFETIME STUDY ON POROUS SILICON WITH A MONOENERGETIC PULSED POSITRON BEAM

被引：28

作者：

SUZUKI, R ^{[1
]}

MIKADO, T ^{[1
]}

OHGAKI, H ^{[1
]}

CHIWAKI, M ^{[1
]}

YAMAZAKI, T ^{[1
]}

KOBAYASHI, Y ^{[1
]}

机构：

[1] NATL INST MAT & CHEM RES,IBARAKI 305,JAPAN

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.49.17484

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Positron-lifetime measurements have been performed on anodized porous silicon as a function of temperature by using a monoenergetic pulsed positron beam. In the lifetime spectra, a long-lived component, which can be attributed to orthopositronium formed at the surface of pores, has been observed. The intensity and the lifetime of the orthopositronium component were found to be strongly influenced by the sample temperature and the annealing temperature. A dramatic increase in the orthopositronium intensity after annealing at 300-400-degrees-C suggests a reduction of positron traps near the surface due to a microstructural change. A temperature-reversible change of the orthopositronium lifetime after annealing at 400-degrees-C suggests that there exist thermally activated dangling bonds at the pore surface at high temperatures. The present study revealed that positron lifetime is highly sensitive to changes in microstructure and pore surface conditions in porous Si.

引用

页码：17484 / 17487

页数：4

共 28 条

[11] PROGRAM SYSTEM FOR ANALYZING POSITRON LIFETIME SPECTRA AND ANGULAR-CORRELATION CURVES
KIRKEGAARD, P
ELDRUP, M
MOGENSEN, OE
PEDERSEN, NJ
[J]. COMPUTER PHYSICS COMMUNICATIONS, 1981, 23 (03) : 307 - 335
[12] INVESTIGATION OF MICROPORES IN AMORPHOUS HYDROGENATED CARBON BY A PULSED POSITRON BEAM
KOGEL, G
SCHODLBAUER, D
TRIFTSHAUSER, W
WINTER, J
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (15) : 1550 - 1553
[13] A NEW SILICON-ON-INSULATOR STRUCTURE USING A SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH ON POROUS SILICON
KONAKA, S
TABE, M
SAKAI, T
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 86 - 88
[14] HEAT-TREATMENT EFFECT ON POROUS SILICON
LABUNOV, V
BONDARENKO, V
GLINENKO, L
DOROFEEV, A
TABULINA, L
[J]. THIN SOLID FILMS, 1986, 137 (01) : 123 - 134
[15] THERMAL-ACTIVATION MEASUREMENT OF POSITRON BINDING-ENERGIES AT SURFACES
MILLS, AP
[J]. SOLID STATE COMMUNICATIONS, 1979, 31 (09) : 623 - 626
[16] Nakanishi H, 1987, POSITRON ANNIHILATIO, P292
[17] EFFECTS OF THERMAL ANNEALING ON POROUS SILICON PHOTOLUMINESCENCE DYNAMICS
OOKUBO, N
ONO, H
OCHIAI, Y
MOCHIZUKI, Y
MATSUI, S
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (08) : 940 - 942
[18] EFFECT OF THERMAL ANNEALING AND SURFACE COVERAGE ON POROUS SILICON PHOTOLUMINESCENCE
ROBINSON, MB
DILLON, AC
HAYNES, DR
GEORGE, SM
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (12) : 1414 - 1416
[19] A PULSING SYSTEM FOR LOW-ENERGY POSITRONS
SCHODLBAUER, D
SPERR, P
KOGEL, G
TRIFTSHAUSER, W
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 34 (02) : 258 - 268
[20] Schrader D M, 1988, POSITRON POSITRONIUM

← 1 2 3 →