EFFECTS OF THERMAL ANNEALING ON POROUS SILICON PHOTOLUMINESCENCE DYNAMICS

被引：105

作者：

OOKUBO, N ^{[1
]}

ONO, H ^{[1
]}

OCHIAI, Y ^{[1
]}

MOCHIZUKI, Y ^{[1
]}

MATSUI, S ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,TSUKUBASHI,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.107735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) spectra and decay dynamics were studied for the spontaneously oxidized porous Si with subsequent various thermal annealing procedures. The PL decay was highly nonexponential and well described by the stretched-exponential function. The PL lifetime was shorter for the higher PL photon energy, but at the same photon energy it decreased by an order of magnitude by the thermal annealing in N2 gas, in parallel with the large PL intensity decrease. This PL quenching upon the annealing is presumably ascribable to both the structural changes and dangling bond formations in porous Si, as suggested by ESR measurements and the annealing experiments in H-2 gas.

引用

页码：940 / 942

页数：3

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