PRESSURE STUDY OF METASTABILITY IN GA1-XALXAS GAAS-SI HETEROJUNCTIONS

被引：9

作者：

PIOTRZKOWSKI, R

ROBERT, JL

LITWINSTASZEWSKA, E

ANDRE, JP

机构：

[1] POLISH ACAD SCI,HIGH PRESSURE RES CTR,PL-01224 WARSAW,POLAND

[2] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.37.1031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1031 / 1034

页数：4

共 12 条

[1] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS
CHAND, N
HENDERSON, T
KLEM, J
MASSELINK, WT
FISCHER, R
CHANG, YC
MORKOC, H
[J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492
[2] CAPTURE AND EMISSION OF ELECTRONS BY THE RESONANT STATE STRONGLY COUPLED TO THE LATTICE IN N-INSB
DMOWSKI, L
BAJ, M
IOANNIDES, P
PIOTRZKOWSKI, R
[J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4495 - 4506
[3] KONCZEWICZ L, UNPUB
[4] PRESSURE AND COMPOSITIONAL DEPENDENCES OF THE HALL-COEFFICIENT IN ALXGA1-XAS AND THEIR SIGNIFICANCE
LIFSHITZ, N
JAYARAMAN, A
LOGAN, RA
CARD, HC
[J]. PHYSICAL REVIEW B, 1980, 21 (02) : 670 - 678
[5] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM
MIZUTA, M
TACHIKAWA, M
KUKIMOTO, H
MINOMURA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L143 - L146
[6] THEORY OF THE DX CENTER IN ALXGA1-XAS AND GAAS CRYSTALS
MORGAN, TN
[J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2664 - 2669
[7] LONG-LIFETIME PHOTOCONDUCTIVITY EFFECT IN N-TYPE GAAIAS
NELSON, RJ
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 351 - 353
[8] ROBERT JL, 1986, ACTA PHYS POL A, V69, P827
[9] TRANSIENT AND PERSISTENT PHOTOCONDUCTIVITY IN N-ALXGA1-XAS AND SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES
SCHUBERT, EF
KNECHT, J
PLOOG, K
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (09): : L215 - L221
[10] TACHIKAWA M, 1985, JPN J APPL PHYS 2, V24, pL893, DOI 10.1143/JJAP.24.L893