CRYSTALLOGRAPHIC ORIENTATIONS OF MGO FILMS PREPARED BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Thin films of magnesium oxide (MgO) were prepared on glass substrates by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) and the relationship between deposition conditions and crystallographic orientations were studied. Highly crystalline and highly (100)-oriented MgO film was obtained at the vaporizing temperature of 210 degrees C, O-2 flow rate of 200 cm(3).min(-1), rf power of 400 W and substrate temperature of 400 degrees C. The orientation of MgO films is changed from (100) to (110) upon increasing the vaporizing temperature from 210 to 240 degrees C or upon decreasing the O-2 flow rate from 200 to 50 cm(3).min(-1). These results indicated that the films deposited at the high arrival ratios of oxygen to magnesium precursor (O/Mg) onto the substrate had a (100) orientation, while those deposited at the low arrival ratios of O/Mg had a (110) orientation. The intrinsic stress of the (100) oriented film was tensile and the magnitude was 0.25 GPa.