FULLY ION-IMPLANTED DSA MOS IC

被引：7

作者：

OHKURA, I

OHMORI, M

SHIMOTORI, K

NAKANO, T

HAYASHI, Y

TARUI, Y

机构：

[1] MITSUBISHI ELECT CORP,LSI DEV LAB,ITAMI,HYOGO,JAPAN

[2] ELECTROTECH LAB,TANASHI,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷

关键词：

D O I：

10.7567/JJAPS.16S1.167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：167 / 171

页数：5

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