MORPHOLOGY OF MICRODEFECTS IN AS-GROWN THINNED SILICON-CRYSTALS OBSERVED BY SYNCHROTRON X-RADIATION PLANE-WAVE TOPOGRAPHY

被引：5

作者：

CHIKAURA, Y ^{[1
]}

IMAI, M ^{[1
]}

机构：

[1] KOMATSU ELECTR MET CO LTD,DIV RES & DEV,HIRATSUKA,KANAGAWA 254,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 02期

关键词：

As-grown silicon; Microdefects in silicon; Plane wave topography; Synchrotorn radiation; Thinned silicon; X-ray topography;

D O I：

10.1143/JJAP.29.221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to reveal more minute microdefects in as-grown CZ silicon crystals, thinned crystals as thin as the order of the extinction distance have been successfully observed by ultra plane-wave topography using synchrotron X-radiation. Various kinds of microdefects reveal themselves only in the thinned region. Using thinned crystals for plane-wave topography is essential for the present experiment. Observed morphologies of microdefects are classified into five categories. One of the observed microdefects has an image extinction rule suggesting a specified strain field around it. The morphology of microdefects has been described in detail. © 1990 The Japan Society of Applied Physics.

引用

页码：221 / 225

页数：5

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