ENERGY-LEVELS IN SILICON

被引：200

作者：

CHEN, JW ^{[1
]}

MILNES, AG ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1980年 / 10卷

关键词：

D O I：

10.1146/annurev.ms.10.080180.001105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：157 / 228

页数：72

共 796 条

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BARBOLLA, J
PUGNET, M
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 36 (02): : 495 - 498
[80] GAMMA-INDUCED TRAPPING LEVELS IN SI WITH AND WITHOUT GOLD DOPING
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