ENERGY-LEVELS IN SILICON

[81] NATURE OF THE 0.111-EV ACCEPTOR LEVEL IN INDIUM-DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 257 - 259

[82] NEW ACCEPTOR LEVEL IN INDIUM-DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 594 - 596

[83] BARUCH P, 1976, RAD EFFECTS SEMICOND, P126

[84] BAYADILOV EM, 1974, SOV PHYS SEMICOND+, V7, P1225

[85] SHEET RESISTANCE VARIATIONS OF PHOSPHORUS IMPLANTED SILICON AT ELEVATED-TEMPERATURES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 357 - 360

[86] BELIKOVA MN, 1976, SOV PHYS SEMICOND+, V10, P319

[87] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J]. PHYSICAL REVIEW, 1958, 111 (06): : 1515 - 1518

[88] GOLD IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (10) : 588 - 591

[89] Bendik N. T., 1971, SOV PHYS-SOLID STATE, V12, P150

[90] BENDIK NT, 1971, SOV PHYS SEMICOND+, V5, P749

[81] NATURE OF THE 0.111-EV ACCEPTOR LEVEL IN INDIUM-DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 257 - 259

[82] NEW ACCEPTOR LEVEL IN INDIUM-DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 594 - 596

[83] BARUCH P, 1976, RAD EFFECTS SEMICOND, P126

[84] BAYADILOV EM, 1974, SOV PHYS SEMICOND+, V7, P1225

[85] SHEET RESISTANCE VARIATIONS OF PHOSPHORUS IMPLANTED SILICON AT ELEVATED-TEMPERATURES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 357 - 360

[86] BELIKOVA MN, 1976, SOV PHYS SEMICOND+, V10, P319

[87] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J]. PHYSICAL REVIEW, 1958, 111 (06): : 1515 - 1518

[88] GOLD IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (10) : 588 - 591

[89] Bendik N. T., 1971, SOV PHYS-SOLID STATE, V12, P150

[90] BENDIK NT, 1971, SOV PHYS SEMICOND+, V5, P749