ENERGY-LEVELS IN SILICON

被引：200

作者：

CHEN, JW ^{[1
]}

MILNES, AG ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1980年 / 10卷

关键词：

D O I：

10.1146/annurev.ms.10.080180.001105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：157 / 228

页数：72

共 796 条

[21] ENERGY LEVELS OF NITROGEN-NITROGEN PAIRS IN GALLIUM PHOSPHIDE
ALLEN, JW
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (04): : 1136 - &
[22] ELECTRICAL CHARACTERISTICS OF SPUTTERING-INDUCED DEFECTS IN TYPE-N SILICON
ANDERSSON, LP
EVWARAYE, AO
[J]. VACUUM, 1978, 28 (01) : 5 - 7
[23] ANDRIANOV DG, 1978, SOV PHYS SEMICOND+, V12, P294
[24] ANDRIANOV DG, 1974, SOV PHYS SEMICOND+, V8, P320
[25] ANTONENKO AK, 1979, SOV PHYS SEMICOND+, V13, P163
[26] ANTONENKO RS, 1978, SOV PHYS SEMICOND+, V12, P1011
[27] ANTONENKO RS, 1977, SOV PHYS SEMICOND, V10, P942
[28] ANTOSHCHUK VV, 1978, SOV PHYS SEMICOND+, V12, P1337
[29] ANTOSHCHUK VV, 1977, SOV PHYS SEMICOND+, V11, P1172
[30] ELECTROCHEMICAL DOPING OF SILICON WITH ARSENIC
ANTULA, J
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (06) : 2581 - 2582