LOCATION OF P-N AND L-H JUNCTIONS IN SEMICONDUCTORS

被引：15

作者：

ILES, PA

COPPEN, PJ

机构：

来源：

BRITISH JOURNAL OF APPLIED PHYSICS | 1960年 / 11卷 / 05期

关键词：

D O I：

10.1088/0508-3443/11/5/302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：177 / 184

页数：8

共 77 条

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[3]

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[5] P-N JUNCTION REVEALED BY ELECTROLYTIC ETCHING [J].

BILLIG, E ;

DOWD, JJ .

NATURE, 1953, 172 (4368) :115-115

[6] THE USE OF AN INTERFERENCE MICROSCOPE FOR MEASUREMENT OF EXTREMELY THIN SURFACE LAYERS [J].

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SMITS, FM .

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[7]

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[8]

BRADLEY W, 1958, TRANSISTOR TECHNOLOG, V1, P149

[9]

Bradshaw S.E., 1956, J ELECTRON, V2, P134

[10]

BURCHAM NP, 1958, TRANSISTOR TECHNOLOG, V3, P175

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