LOCATION OF P-N AND L-H JUNCTIONS IN SEMICONDUCTORS

被引：15

作者：

ILES, PA

COPPEN, PJ

机构：

来源：

BRITISH JOURNAL OF APPLIED PHYSICS | 1960年 / 11卷 / 05期

关键词：

D O I：

10.1088/0508-3443/11/5/302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：177 / 184

页数：8

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