ELECTRONIC-STRUCTURES OF POROUS SI STUDIED BY CORE-LEVEL ABSORPTION AND PHOTOEMISSION SPECTROSCOPY

被引：11

作者：

INOUE, K

MAEHASHI, K

NAKASHIMA, H

机构：

[1] The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka, 567

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 3B期

关键词：

POROUS SI; ELECTRONIC STRUCTURES; SYNCHROTRON RADIATION; CORE-LEVEL ABSORPTION; PHOTOEMISSION; PHOTOLUMINESCENCE;

D O I：

10.1143/JJAP.32.L361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For the investigation of the electronic structures of porous Si, 2p core-level absorption and photoemission spectra are measured with synchrotron radiation. The core-level absorption spectra indicate that the conduction band of porous Si shifts toward higher energy as compared with that of bulk Si. This shift correlates well with the photoluminescence blueshift. From photoemission spectra of porous Si in the Si 2p core-level regions, oxidized states on the porous surface are examined.

引用

页码：L361 / L364

页数：4

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