CHARGING EFFECTS IN PLASMA IMMERSION ION-IMPLANTATION FOR MICROELECTRONICS

被引：26

作者：

QIN, S ^{[1
]}

BERNSTEIN, JD ^{[1
]}

ZHAO, ZF ^{[1
]}

LIU, W ^{[1
]}

CHAN, C ^{[1
]}

SHAO, JQ ^{[1
]}

DENHOLM, S ^{[1
]}

机构：

[1] EATON CORP,DIV SEMICOND EQUIPMENT,BEVERLY,MA 01915

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 05期

关键词：

D O I：

10.1116/1.588121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The charging effects of plasma immersion ion implantation (Pm) doping experiments have been investigated using a dynamic sheath model and PDP1 plasma simulation code. When the target has a dielectric film, charge accumulation during Pm can have a profound impact on doping results. Under certain process conditions, it can significantly reduce implant energy and dose and thereby alter the implant profile. In addition, it may degrade device reliability, especially for ultralarge-scale integrated circuit devices. In order to minimize charging effects, shorter pulse widths along with moderate values of plasma density and pulse potential should be used. (C) 1995 American Vacuum Society.

引用

页码：1994 / 1998

页数：5

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