CHARACTERIZATION OF GAAS SELF-ALIGNED REFRACTORY-GATE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MESFET) INTEGRATED-CIRCUITS

被引：14

作者：

MAGERLEIN, JH ^{[1
]}

WEBB, DJ ^{[1
]}

CALLEGARI, A ^{[1
]}

FEDER, JD ^{[1
]}

FRYXELL, T ^{[1
]}

GUTHRIE, HC ^{[1
]}

HOH, PD ^{[1
]}

MITCHELL, JW ^{[1
]}

POMERENE, ATS ^{[1
]}

SCONTRAS, S ^{[1
]}

SPIERS, GD ^{[1
]}

GREINER, JH ^{[1
]}

机构：

[1] IBM CORP, GTD E FISHKILL FACIL, HOPEWELL JUNCTION, NY 12533 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.337808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3080 / 3092

页数：13

共 42 条

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