ELECTRICAL AND THERMAL-STABILITY OF AUGENI OHMIC CONTACTS TO GAAS FABRICATED WITH INSITU RF SPUTTER CLEANING

[1] Baker J., UNPUB

[2] BAKER JM, 1980, 8TH P INT VAC C CANN

[3] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[4] OHMIC CONTACTS TO GAAS [J]. THIN SOLID FILMS, 1983, 104 (3-4) : 391 - 397

[5] ALLOYED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807

[6] CALLEGARI A, 1985, APPL PHYS LETT

[7] HEIBLUM M, 1982, SOLID STATE ELECTRON, V25, P185, DOI 10.1016/0038-1101(82)90106-X

[8] METALLURGICAL BEHAVIOR OF NI/AU-GE OHMIC CONTACTS TO GAAS [J]. SOLID STATE COMMUNICATIONS, 1984, 49 (01) : 99 - 101

[9] ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6952 - 6957

[10] MURAKAMI M, UNPUB

[1] Baker J., UNPUB

[2] BAKER JM, 1980, 8TH P INT VAC C CANN

[3] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[4] OHMIC CONTACTS TO GAAS [J]. THIN SOLID FILMS, 1983, 104 (3-4) : 391 - 397

[5] ALLOYED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807

[6] CALLEGARI A, 1985, APPL PHYS LETT

[7] HEIBLUM M, 1982, SOLID STATE ELECTRON, V25, P185, DOI 10.1016/0038-1101(82)90106-X

[8] METALLURGICAL BEHAVIOR OF NI/AU-GE OHMIC CONTACTS TO GAAS [J]. SOLID STATE COMMUNICATIONS, 1984, 49 (01) : 99 - 101

[9] ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6952 - 6957

[10] MURAKAMI M, UNPUB