RE-EXAMINATION OF HIGH-PRESSURE ELECTRON-TRANSPORT PROPERTIES OF GAAS

Previous data by G. D. Pitt and J. Lees on the pressure variation of the electrical conductivity sigma and Hall coefficient R//H of n-type GaAs samples have been reanalyzed using a three band ( GAMMA ,L,X) model. Calculations of sigma and R//H have been made, the resulting values fitted to the experimental data using the pressure coefficients of the band energy differences, the deformation potential E//D//X of the X band, and the coupling coefficient D//L//X between L and X bands as adjustable parameters and taking all other scattering parameters from a previous analysis of the temperature variation of sigma and R//H. The results give values of E//D//X and D//L//X of 12. 5 eV and 1. 1 multiplied by 10**1**1 eV/m, respectively, and stress the importance of interband scattering in determining electron mobility values.