STRUCTURE OF THIN-FILMS PREPARED BY THE COSPUTTERING OF TITANIUM AND ALUMINUM OR TITANIUM AND SILICON

被引：24

作者：

BEENSHMARCHWICKA, G

KROLSTEPNIEWSKA, L

POSADOWSKI, W

机构：

来源：

THIN SOLID FILMS | 1981年 / 82卷 / 04期

关键词：

D O I：

10.1016/0040-6090(81)90474-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：313 / 320

页数：8

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[5]

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[7] PROPERTIES OF TINX FILMS REACTIVELY SPUTTERED IN AN ARGON-NITROGEN ATMOSPHERE [J].

POSADOWSKI, W ;

KROLSTEPNIEWSKA, L ;

ZIOLOWSKI, Z .

THIN SOLID FILMS, 1979, 62 (03) :347-351

[8] PROPERTIES OF SILICON-NITRIDE THIN-FILMS OBTAINED BY REACTIVE SPUTTERING [J].

POSADOWSKI, W .

THIN SOLID FILMS, 1980, 69 (02) :149-155

[9]

POSADOWSKI W, 1979, 1ST NATL AUT SCH PHY

[10] STRUCTURES AND RESISTIVE PROPERTIES OF SPUTTERED TI-ZR-AL-N THIN-FILMS [J].

WASA, K ;

HAYAKAWA, S .

THIN SOLID FILMS, 1972, 10 (03) :367-&

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