HIGH-TEMPERATURE THERMAL EVOLUTION OF SIAS PRECIPITATES IN SILICON

被引：10

作者：

PARISINI, A

NOBILI, D

ARMIGLIATO, A

DERDOUR, M

MORO, L

SOLMI, S

机构：

[1] UNIV BOLOGNA,DIPARTIMENTO CHIM APPL & SCI MAT,I-40126 BOLOGNA,ITALY

[2] IRST,DIV SCI MAT,I-38050 TRENT,ITALY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 54卷 / 03期

关键词：

D O I：

10.1007/BF00323840

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermal evolution of monoclinic SiAs precipitates at 1050-degrees-C in silicon samples implanted with 1 and 1.5 x 10(17) As/cm2 was followed by transmission electron microscopy (TEM) and secondary neutral mass spectrometry (SNMS). These experiments show, for the first time, the coexistence of two different states of As in silicon, i.e., the electrically active and the inactive mobile dopant, in equilibrium with monoclinic SiAs precipitates. Moreover, they provide, for the saturation concentration of As in silicon, which includes both these states, a value of 3 x 10(21) cm-3 at 1050-degrees-C.

引用

页码：221 / 224

页数：4

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