FABRICATION OF 1.5-MU-M OPTICALLY PUMPED GA1-XINXASYP1-Y/INP VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：7

作者：

STREUBEL, K

ANDRE, J

WALLIN, J

LANDGREN, G

机构：

[1] Laboratory of Photonics and Microwave Engineering, Department of Electronics, Royal Institute of Technology, 164 40 Kista

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

REACTIVE ION ETCHING; SEMICONDUCTOR LASERS; ELECTRON BEAM EVAPORATION; EPITAXY; MOVPE;

D O I：

10.1016/0921-5107(94)90066-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the fabrication of Ga1-xInxAsyP1-y/InP vertical-cavity surface emitting lasers for long-wavelength operation and optical pumping. Bottom mirrors and active regions grown by metal-organic vapour-phase epitaxy showed high reflectivities and excellent wavelength tuning. Si/SiO2 top mirrors were deposited by electron beam evaporation and shaped by lift-off. Laser mesas with various diameters and aspects ratios up to 14 were etched by reactive ion etching and a methane-based plasma. Lasing operation was obtained for mesa diameters down to 5 mu m. The average threshold power for the mesa of 5 mu m diameter was 18 mW. Devices with diameters of 30 mu m or more operated up to 70 degrees C.

引用

页码：289 / 292

页数：4

共 7 条

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