EFFECTS OF THE LOCAL ENVIRONMENT ON THE PROPERTIES OF DX CENTERS IN SI-DOPED GAAS AND DILUTE ALXGA1-XAS ALLOYS

被引：68

作者：

CALLEJA, E ^{[1
]}

GARCIA, F ^{[1
]}

GOMEZ, A ^{[1
]}

MUNOZ, E ^{[1
]}

MOONEY, PM ^{[1
]}

MORGAN, TN ^{[1
]}

WRIGHT, SL ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.102630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si-doped GaAs and dilute AlxGa1-xAs alloys under hydrostatic pressure have been studied using deep level transient spectroscopy (DLTS). In GaAs the DLTS spectrum of the DX center is a single peak. In AlGaAs however, multiple peaks, resulting from different thermal emission rates from donors having different numbers of Al atoms as near neighbors, are observed. The pressure dependence of the electron occupation of individual DX levels shows that the larger the number of Al atoms near the Si donor, the lower the energy position of the DX level.

引用

页码：934 / 936

页数：3

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