MASS DEPENDENCE OF CRITICAL AMORPHIZING DOSE IN ION IMPLANTATION

[1] ION IMPLANTATION DEPTH DISTRIBUTIONS - ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 103 - &

[2] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) : 134 - +

[3] FURUKAWA S, 1970, 2ND P C SOL STAT DEV, P3

[4] IKEDA T, 1969, 16 CONV REC JAP SOC

[5] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[6] MAYER JW, 1967, CANAD J PHYS, V45, P4053

[7] MAYER JW, 1970, ION IMPLANTATION SEM, P99

[8] Picraux S. T., 1971, Radiation Effects, V7, DOI 10.1080/00337577108232569

[9] ON NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS [J]. APPLIED PHYSICS LETTERS, 1969, 14 (03) : 114 - &

[10] SIGMUND P, 1967, P INT C APPLICATIONS, P215

[1] ION IMPLANTATION DEPTH DISTRIBUTIONS - ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 103 - &

[2] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) : 134 - +

[3] FURUKAWA S, 1970, 2ND P C SOL STAT DEV, P3

[4] IKEDA T, 1969, 16 CONV REC JAP SOC

[5] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[6] MAYER JW, 1967, CANAD J PHYS, V45, P4053

[7] MAYER JW, 1970, ION IMPLANTATION SEM, P99

[8] Picraux S. T., 1971, Radiation Effects, V7, DOI 10.1080/00337577108232569

[9] ON NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS [J]. APPLIED PHYSICS LETTERS, 1969, 14 (03) : 114 - &

[10] SIGMUND P, 1967, P INT C APPLICATIONS, P215