ANALYSIS OF THIN EPITAXIAL LAYERS OF GAAS USING MEV ALPHA-PARTICLES

被引：7

作者：

WOOD, DR ^{[1
]}

MORGAN, DV ^{[1
]}

机构：

[1] UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS,ENGLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 17卷 / 02期

关键词：

D O I：

10.1002/pssa.2210170252

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K143 / K147

页数：5

共 13 条

[1] INVESTIGATION OF LOW-ENERGY ION SCATTERING AS A SURFACE ANALYTICAL TECHNIQUE [J].

BALL, DJ ;

BUCK, TM ;

WHEATLEY, GH ;

MACNAIR, D .

SURFACE SCIENCE, 1972, 30 (01) :69-&

[2]

BAXENDALL PJ, 1971, J PHYS E, V4, P213

[3]

BOGH E, 1973, CHANNELLING ITS THEO

[4]

DAVIES JA, 1972, RADIAT EFF, V12, P247

[5] ORIGIN OF HIGH RESISTANCE REGION AT EPITAXIAL GAAS LAYER-SUBSTRATE INTERFACE [J].

HASEGAWA, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) :930-&

[6] CHANNELING-EFFECT ANALYSIS OF THIN FILMS ON SILICON - ALUMINUM OXIDE [J].

MITCHELL, IV ;

KAMOSHIDA, M ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4378-+

[7]

MITCHELL IV, 1971, APPL PHYS LETT, V18, P292

[8] INVESTIGATION OF STOICHIOMETRY AND IMPURITY CONTENT OF THIN SILICON OXIDE-FILMS USING RUTHERFORD SCATTERING OF MEV ALPHA-PARTICLES [J].

MORGAN, DV ;

GITTINS, RP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 13 (02) :517-&

[9] APPLICATION OF RUTHERFORD SCATTERING AND CHANNELING TECHNIQUES TO STUDY SEMICONDUCTOR SURFACES [J].

MORGAN, DV ;

BOGH, E .

SURFACE SCIENCE, 1972, 32 (02) :278-&

[10]

MORGAN DV, TO BE PUBLISHED

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