ORIGIN OF HIGH RESISTANCE REGION AT EPITAXIAL GAAS LAYER-SUBSTRATE INTERFACE

被引：10

作者：

HASEGAWA, F

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 07期

关键词：

D O I：

10.1149/1.2404371

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：930 / &

共 16 条

[1]

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DILORENZO, JV ;

MARCUS, RB ;

LEWIS, R .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :729-+

[3]

DILORENZO JV, 1971, OCT EL SOC M CLEV

[4]

HALL RN, 1970, J APPL PHYS, V9, P379

[5] OCCURRENCE OF A HIGH RESISTANCE LAYER IN GAAS SUBSTRATE THROUGH VAPOR EPITAXIAL PROCESS [J].

HASEGAWA, F ;

SAITO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (12) :1540-&

[6] IMPURITY TRANSFER IN GAAS VAPOR GROWTH AND CARRIER-CONCENTRATION PROFILES OF GROWN FILMS [J].

HASEGAWA, F ;

SAITO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (11) :1342-&

[7] OCCURENCE OF HIGH RESISTANCE LAYER AT VAPOR EPITAXIAL GAAS FILM-SUBSTRATE INTERFACE [J].

HASEGAWA, F ;

SAITO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) :1125-&

[8]

HASEGAWA F, 1970, JAPAN J APPL PHYS, V9, P639

[9]

HIRAO M, 1970, 2 P C SOL STAT DEV T, P46

[10] ORIGIN OF HIGH RESISTANCE AT EPITAXIAL LAYER-SUBSTRATE INTERFACE OF GAAS GROWN BY VAPOR EPITAXY [J].

IWASAKI, H ;

SUGIBUCHI, K .

APPLIED PHYSICS LETTERS, 1971, 18 (10) :420-+

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