C-V CHARACTERISTICS OF SIC METAL-OXIDE-SEMICONDUCTOR DIODE WITH A THERMALLY GROWN SIO2 LAYER

被引：16

作者：

SUZUKI, A

MAMENO, K

FURUI, N

MATSUNAMI, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 01期

关键词：

D O I：

10.1063/1.92527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：89 / 90

页数：2

共 14 条

[1]

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