CHARGE STORAGE ON THIN SRTIO3 FILM BY CONTACT ELECTRIFICATION

被引：8

作者：

UCHIHASHI, T ^{[1
]}

OKUSAKO, T ^{[1
]}

TSUYUGUCHI, T ^{[1
]}

SUGAWARA, Y ^{[1
]}

IGARASHI, M ^{[1
]}

KANEKO, R ^{[1
]}

MORITA, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1994年 / 33卷 / 9B期

关键词：

CHARGE STORAGE; SRTIO3; CONTACT ELECTRIFICATION; ATOMIC FORCE MICROSCOPE; REPEATED STORAGE; BIPOLAR STORAGE; CHARGE DOT; ELECTROSTATIC FORCE;

D O I：

10.1143/JJAP.33.5573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge storage on thin SrTiO3 (STO) film was investigated by contact electrification. An atomic force microscope (AFM) biased by the voltage was used to deposit the charges by contact electrification and to detect electrostatic force change induced by contact electrified charges. As a result, writing, reading and erasing were demonstrated successfully with a small pattern, small letters and small dot arrays. Besides, two adjacent positive charge dots were discriminated with separation as small as similar to-63 nm. These results revealed the potential capability of the present system, i.e., contact electrification on STO film with a biased AFM, for high-density charge storage.

引用

页码：5573 / 5576

页数：4

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