CONTACT ELECTRIFICATION ON THIN SRTIO3 FILM BY ATOMIC-FORCE MICROSCOPE

被引：12

作者：

UCHIHASHI, T ^{[1
]}

OKUSAKO, T ^{[1
]}

YAMADA, J ^{[1
]}

FUKANO, Y ^{[1
]}

SUGAWARA, Y ^{[1
]}

IGARASHI, M ^{[1
]}

KANEKO, R ^{[1
]}

MORITA, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 3A期

关键词：

CONTACT ELECTRIFICATION; CHARGE STORAGE; NONVOLATILE MEMORIES; ATOMIC FORCE MICROSCOPE; DISSIPATION; ELECTRIFIED CHARGE; DIELECTRIC CONSTANT;

D O I：

10.1143/JJAP.33.L374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently, we achieved reproducible and controllable contact electrification with a modified atomic force microscope (AFM). In the present paper, we report on the application of this novel microscopic method to investigate dissipation and spatial distribution of contact-electrified charges on SrTiO3 (STO) thin films with large dielectric constants. A charge dot with a Full width at half-maximum as small as 70 nm has been deposited using this technique. We also succeeded in depositing two adjacent dots with arbitrary charge signs. Thus, its potential capability for application to charge storage was clarified experimentally.

引用

页码：L374 / L376

页数：3

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