BORON NEUTRALIZATION AND HYDROGEN DIFFUSION IN SILICON SUBJECTED TO LOW-ENERGY HYDROGEN IMPLANTATION

被引：43

作者：

ZUNDEL, T ^{[1
]}

MESLI, A ^{[1
]}

MULLER, JC ^{[1
]}

SIFFERT, P ^{[1
]}

机构：

[1] CTR RECH NUCL,CNRS,UA 292,PHYS & APPLICAT SEMICOND LAB,F-67037 STRASBOURG,FRANCE

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 01期

关键词：

D O I：

10.1007/BF00617761

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：31 / 40

页数：10

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