ELECTRICAL-PROPERTIES OF HYDROGEN BOMBARDED SILICON SURFACES

[1] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 670 - 671

[2] SUBSTRATE SURFACE DAMAGES BY RF-SPUTTERING [J]. VACUUM, 1977, 27 (03) : 189 - 191

[3] MODIFICATION OF METAL-SILICON CONTACTS BY LOW-ENERGY ARGON ION-BOMBARDMENT [J]. REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (12): : 971 - 978

[4] CLIMENT A, 1984, MATERIALS RES SOC S, V25, P613

[5] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 423 - 425

[6] GARIDO J, 1981, SOLID STATE ELECTRON, V24, P1121

[7] JOUSSE D, 1979, THESIS GRENOBLE

[8] THE INFLUENCE OF ARGON ION-BOMBARDMENT ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF CLEAN SILICON SURFACES [J]. SURFACE SCIENCE, 1981, 105 (01) : 275 - 288

[9] MULLER JC, 1984, IBMM C ITHACA

[10] MULLER JC, 1982, P INT MESSE BAUELEME, P107

[1] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 670 - 671

[2] SUBSTRATE SURFACE DAMAGES BY RF-SPUTTERING [J]. VACUUM, 1977, 27 (03) : 189 - 191

[3] MODIFICATION OF METAL-SILICON CONTACTS BY LOW-ENERGY ARGON ION-BOMBARDMENT [J]. REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (12): : 971 - 978

[4] CLIMENT A, 1984, MATERIALS RES SOC S, V25, P613

[5] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 423 - 425

[6] GARIDO J, 1981, SOLID STATE ELECTRON, V24, P1121

[7] JOUSSE D, 1979, THESIS GRENOBLE

[8] THE INFLUENCE OF ARGON ION-BOMBARDMENT ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF CLEAN SILICON SURFACES [J]. SURFACE SCIENCE, 1981, 105 (01) : 275 - 288

[9] MULLER JC, 1984, IBMM C ITHACA

[10] MULLER JC, 1982, P INT MESSE BAUELEME, P107