SCANNING ELECTRON-MICROSCOPIC OBSERVATION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON

[1] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (121): : 71 - &

[2] DETERMINATION OF DOPANT-CONCENTRATION DIFFUSION LENGTH AND LIFETIME VARIATIONS IN SILICON BY SCANNING ELECTRON-MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3433 - 3440

[3] DONOLATO C, 1978, OPTIK, V52, P19

[4] Donolato C., 1979, Scanning Electron Microscopy, P257

[5] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &

[6] ICHIDA Y, 1980, STP712 ASTM AM SOC T, P107

[7] EXTRINSIC STACKING FAULTS IN SILICON AFTER HEATING IN WET OXYGEN [J]. APPLIED PHYSICS LETTERS, 1966, 8 (01) : 29 - +

[8] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[9] PENETRATION AND ENERGY-LOSS THEORY OF ELECTRONS IN SOLID TARGETS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) : 43 - &

[10] X-RAY STUDY OF SMALL DISLOCATION LOOPS IN THERMALLY OXIDIZED SILICON [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1972, 5 (JUL1) : 281 - &

[1] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (121): : 71 - &

[2] DETERMINATION OF DOPANT-CONCENTRATION DIFFUSION LENGTH AND LIFETIME VARIATIONS IN SILICON BY SCANNING ELECTRON-MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3433 - 3440

[3] DONOLATO C, 1978, OPTIK, V52, P19

[4] Donolato C., 1979, Scanning Electron Microscopy, P257

[5] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &

[6] ICHIDA Y, 1980, STP712 ASTM AM SOC T, P107

[7] EXTRINSIC STACKING FAULTS IN SILICON AFTER HEATING IN WET OXYGEN [J]. APPLIED PHYSICS LETTERS, 1966, 8 (01) : 29 - +

[8] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[9] PENETRATION AND ENERGY-LOSS THEORY OF ELECTRONS IN SOLID TARGETS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) : 43 - &

[10] X-RAY STUDY OF SMALL DISLOCATION LOOPS IN THERMALLY OXIDIZED SILICON [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1972, 5 (JUL1) : 281 - &