CHEMICAL SURFACE MECHANISTIC CONSIDERATIONS IN THE DESIGN OF NOVEL PRECURSORS FOR METALORGANIC MOLECULAR-BEAM EPITAXY

被引:31
作者
BOHLING, DA
ABERNATHY, CR
JENSEN, KF
机构
[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
[2] MIT, CAMBRIDGE, MA 02139 USA
关键词
D O I
10.1016/0022-0248(94)90394-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
in the design of chemical precursors for metalorganic molecular beam epitaxy (MOMBE), the following issues must be considered: the intrinsic decomposition pathways of the source, the interaction of the reactant and products with the interface, and volatility and safety of the precursor. A representative example would be the development of alternative group V metalorganic sources as arsine and phosphine substitutes. The standard sources used in MOMBE in growing GaAs or any other arsenic based III-V material are typically solid arsenic or thermally cracked arsine. Both sources produce As2 and/or As4 which then are transported to the growth surface. Although these are used effectively in III-V growth, chemical substitutes are desirable for a number of reasons, including safety, minimization of system corrosion, and selectivity. A number of alternative arsine substitutes have been suggested over the years, but this paper will focus mainly on the mechanistic design considerations of three group V materials; tertiary butyl arsine (TBAs), phenyl arsine (PhAs), and tris-dimethylamino arsenic (DMAAs). Other examples of group III chemical precursors for MOMBE will also be considered.
引用
收藏
页码:118 / 126
页数:9
相关论文
共 23 条
[1]   ALTERNATIVE GROUP-V SOURCES FOR GROWTH OF GAAS AND ALGAAS BY MOMBE (CBE) [J].
ABERNATHY, CR ;
WISK, PW ;
PEARTON, SJ ;
REN, F ;
BOHLING, DA ;
MUHR, GT .
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :64-69
[2]   GROWTH OF HIGH-QUALITY ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIMETHYLAMINE ALANE [J].
ABERNATHY, CR ;
JORDAN, AS ;
PEARTON, SJ ;
HOBSON, WS ;
BOHLING, DA ;
MUHR, GT .
APPLIED PHYSICS LETTERS, 1990, 56 (26) :2654-2656
[3]   SURFACE ORGANOMETALLIC CHEMISTRY IN THE CHEMICAL VAPOR-DEPOSITION OF ALUMINUM FILMS USING TRIISOBUTYLALUMINUM - BETA-HYDRIDE AND BETA-ALKYL ELIMINATION-REACTIONS OF SURFACE ALKYL INTERMEDIATES [J].
BENT, BE ;
NUZZO, RG ;
DUBOIS, LH .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1989, 111 (05) :1634-1644
[4]  
BIEFELD RM, 1993, MAT RES S C, V282, P11
[5]   THE SEARCH FOR ALL-HYDRIDE MOMBE - EXAMINATION OF TRIMETHYLAMINE ALANE, TRIMETHYLAMINE GALLANE, AND ARSINE [J].
BOHLING, DA ;
MUHR, GT ;
ABERNATHY, CR ;
JORDAN, AS ;
PEARTON, SJ ;
HOBSON, WS .
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :1068-1069
[6]   METAL ALKOXIDES AS PRECURSORS FOR ELECTRONIC AND CERAMIC MATERIALS [J].
BRADLEY, DC .
CHEMICAL REVIEWS, 1989, 89 (06) :1317-1322
[7]   EXPERIMENTAL AND THEORETICAL EVIDENCE FOR AS-H BOND-CLEAVAGE IN THE DECOMPOSITION OF PRIMARY ARYLARSINES [J].
FOSTER, DF ;
GLIDEWELL, C ;
COLEHAMILTON, DJ .
APPLIED PHYSICS LETTERS, 1993, 63 (01) :57-59
[8]   MOCVD OF ALGAAS/GAAS WITH NOVEL GROUP-III COMPOUNDS [J].
FRESE, V ;
REGEL, GK ;
HARDTDEGEN, H ;
BRAUERS, A ;
BALK, P ;
HOSTALEK, M ;
LOKAI, M ;
POHL, L ;
MIKLIS, A ;
WERNER, K .
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (04) :305-310
[9]   COORDINATIVELY SATURATED GA COMPOUNDS - A NEW TYPE OF GROUP-III PRECURSOR FOR THE MOCVD OF GAAS [J].
FRESE, V ;
REGEL, GK ;
HARDTDEGEN, H ;
BRAUERS, A ;
BALK, P ;
HOSTALEK, M ;
LOKAI, M ;
POHL, L .
JOURNAL OF CRYSTAL GROWTH, 1990, 102 (1-2) :290-292
[10]   SILICON DIMETHYLAMIDO COMPLEXES AND AMMONIA AS PRECURSORS FOR THE ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE THIN-FILMS [J].
GORDON, RG ;
HOFFMAN, DM ;
RIAZ, U .
CHEMISTRY OF MATERIALS, 1990, 2 (05) :480-482