CRITIQUE OF THEORY OF P-N-P-N DEVICES

被引：27

作者：

GIBBONS, JF

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1964.15352

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：406 / &

共 9 条

[1]

FULOP W, 1963, IEEE T, VED10, P120

[2]

GENTRY FE, 1964, IEEE T ELECTRON DEVI, VED11, P74

[3]

LINVILL JG, 1961, TRANSISTORS ACTIVE C, pCH4

[4]

LINVILL JG, 1961, TRANSISTORS ACTIVE C, pCH5

[5] THE ELECTRICAL CHARACTERISTICS OF SILICON P-N-P-N TRIODES [J].

MACKINTOSH, IM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1229-1235

[6] AVALANCHE BREAKDOWN IN GERMANIUM [J].

MILLER, SL .

PHYSICAL REVIEW, 1955, 99 (04) :1234-1241

[7]

MOLL, 1956, P IRE, V44, P1174

[8] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J].

MOLL, JL ;

VANOVERSTRAETEN, R .

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243