SPECTRAL-ANALYSIS OF DEEP LEVEL TRANSIENT SPECTROSCOPY (SADLTS)

被引：38

作者：

MORIMOTO, J ^{[1
]}

FUDAMOTO, M ^{[1
]}

TAHIRA, K ^{[1
]}

KIDA, T ^{[1
]}

KATO, S ^{[1
]}

MIYAKAWA, T ^{[1
]}

机构：

[1] NATL DEF ACAD,DEPT ELECT ENGN,YOKOSUKA,KANAGAWA 239,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 10期

关键词：

D O I：

10.1143/JJAP.26.1634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1634 / 1640

页数：7

共 21 条

[1] REFINEMENTS IN THE METHOD OF MOMENTS FOR ANALYSIS OF MULTIEXPONENTIAL CAPACITANCE TRANSIENTS IN DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

IKOSSIANASTASIOU, K ;

ROENKER, KP .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) :182-190

[2] FOURIER-ANALYSIS FOR THE ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY SIGNAL [J].

ISHIKAWA, T ;

KWON, YK ;

KUWANO, H .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1097-1099

[3] THE ANALYSIS OF EXPONENTIAL AND NON-EXPONENTIAL TRANSIENTS IN DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

KIRCHNER, PD ;

SCHAFF, WJ ;

MARACAS, GN ;

EASTMAN, LF ;

CHAPPELL, TI ;

RANSOM, CM .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6462-6470

[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[5] MULTIEXPONENTIAL ANALYSIS OF DLTS [J].

MORIMOTO, J ;

KIDA, T ;

MIKI, Y ;

MIYAKAWA, T .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (03) :197-202

[6]

MORIMOTO J, 1986, MATER RES SOC S P, V69, P343

[7] METHOD OF ANALYSIS OF A SINGLE-PEAK DLTS SPECTRUM WITH 2 OVERLAPPING DEEP-TRAP RESPONSES [J].

NAKASHIMA, H ;

MIYAGAWA, T ;

SUGITANI, S ;

HASHIMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (02) :205-208

[8] ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY FOR DETERMINATION OF DEEP LEVEL PARAMETERS [J].

OKUSHI, H ;

TOKUMARU, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :L335-L338

[9] DEEP LEVEL TRANSIENT SPECTROSCOPY EVALUATION OF NON-EXPONENTIAL TRANSIENTS IN SEMICONDUCTOR ALLOYS [J].

OMLING, P ;

SAMUELSON, L ;

GRIMMEISS, HG .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5117-5122

[10]

Provencher S. W., 1976, Journal of Chemical Physics, V64, P2772, DOI 10.1063/1.432601

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