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STRUCTURE AND COMPOSITION OF THE SI-SIO2 INTERFACIAL REGION ON TCE-O2 AND CCL4-O2 OXIDIZED SILICON

被引：8
作者：
FRENZEL, H
BALK, P
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期
关键词：
D O I：
10.1116/1.570219
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1454 / 1456
页数：3
相关论文
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