RANGES AND STANDARD DEVIATIONS OF IMPLANTED IONS

被引:8
作者
YUDIN, VV
机构
来源
APPLIED PHYSICS | 1978年 / 15卷 / 02期
关键词
D O I
10.1007/BF00928213
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:223 / 228
页数:6
相关论文
共 20 条
[1]  
[Anonymous], 1963, KGL DANSKE VIDENSKAB
[2]   PROPERTIES OF SILICON IMPLANTED WITH BORON IONS THROUGH THERMAL SILICON DIOXIDE [J].
BAUER, LO ;
MACPHERSON, MR ;
ROBINSON, AT ;
DILL, HG .
SOLID-STATE ELECTRONICS, 1973, 16 (03) :289-+
[4]  
Firsov OB., 1959, J EXPT THEORET PHYS, V36, P1517
[5]  
FURUKAWA S, 1975, ION IMPLANTATION SEM, P143
[6]  
GRIGOREV A, 1975, P PHYS TECHN I KHARK, V1, P93
[7]  
JOHNSON WS, 1970, PROJECTED RANGE STAT
[8]   ION-IMPLANTED SEMICONDUCTOR-DEVICES [J].
LEE, DH ;
MAYER, JW .
PROCEEDINGS OF THE IEEE, 1974, 62 (09) :1241-1255
[9]  
Lindhard J., 1968, K DAN VIDENSK SELSK, V36, P10
[10]  
OKABAYASHI H, 1974, NEC RES DEVELOP, V35, P10