STRUCTURE AND COMPOSITION OF SILICON-OXIDES GROWN IN HCI-O2 AMBIENTS

被引：32

作者：

MONKOWSKI, J ^{[1
]}

TRESSLER, RE ^{[1
]}

STACH, J ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 11期

关键词：

D O I：

10.1149/1.2131312

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1867 / 1873

页数：7

共 17 条

[1]

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[2]

Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363

[3]

BUTLER SR, 1977, MAY EL SOC EXT ABSTR, P217

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HILE, JW .

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[5] GAS-PHASE ETCHING OF SILICON WITH CHLORINE [J].

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[6] INVESTIGATION OF SILICON ETCHING AND SILICON DIOXIDE BUBBLE FORMATION DURING SILICON OXIDATION IN HC1-OXYGEN ATMOSPHERES [J].

HESS, DW ;

MCDONALD, RC .

THIN SOLID FILMS, 1977, 42 (01) :127-131

[7] A JET ETCHING PREPARTION TECHNIQUE FOR TRANSMISSION ELECTRON MICROSCOPE EXAMINATION OF SURFACE LAYERS ON SILICON [J].

KEAST, DJ ;

WILSON, AD .

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[8]

KRIEGLER RJ, 1973, DENKI KAGAKU, V41, P466

[9] RESIDUAL CHLORINE IN O2-HCL GROWN SIO2 [J].

MEEK, RL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (02) :308-310

[10]

MONKOWSKI J, 1977, SEMICONDUCTOR SILICO, P324

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