INVESTIGATION OF SILICON ETCHING AND SILICON DIOXIDE BUBBLE FORMATION DURING SILICON OXIDATION IN HC1-OXYGEN ATMOSPHERES

被引：11

作者：

HESS, DW ^{[1
]}

MCDONALD, RC ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94303

来源：

THIN SOLID FILMS | 1977年 / 42卷 / 01期

关键词：

D O I：

10.1016/0040-6090(77)90086-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：127 / 131

页数：5

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