STRUCTURE AND COMPOSITION OF SILICON-OXIDES GROWN IN HCI-O2 AMBIENTS

被引：32

作者：

MONKOWSKI, J ^{[1
]}

TRESSLER, RE ^{[1
]}

STACH, J ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 11期

关键词：

D O I：

10.1149/1.2131312

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1867 / 1873

页数：7

共 17 条

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SHIRAKI H, 1977, SEMICONDUCTOR SILICO, P546

[17] PROPERTIES OF SIO2 GROWN IN PRESENCE OF HCL OR C-12 [J].

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