PLASMA-ASSISTED EPITAXY OF INAS LAYERS ON GAAS

InAs layers were epitaxially grown on (100) semi-insulating GaAs by plasma-assisted epitaxy (PAE) over a wide range of V/III supply ratio, where the epitaxial growth temperature could be reduced down to 300-degrees-C and the electrical properties could be remarkably improved compared with the growth without plasma. The V/III supply ratio should be more precisely controlled at a lower temperature, because the electrical properties of InAs layers grown at 300-degrees-C depend much more critically upon the supply ratio than those grown at 400-degrees-C.