THE EFFECT OF HYDROGEN PLASMA ON THE LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB

[1] BETHEA CG, 1987, APPL PHYS LETT, V50, P927

[2] THE PREPARATION OF INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) : 255 - 263

[3] CHIANG PK, 1986, J ELECTROCHEM SOC, V131, P2422

[4] Matsushita K., 1984, Journal of the Vacuum Society of Japan, V27, P569, DOI 10.3131/jvsj.27.569

[5] GROWTH OF SB AND INSB BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7416 - 7420

[6] HETEROEPITAXY OF INSB ON SILICON BY METALORGANIC MAGNETRON SPUTTERING [J]. APPLIED PHYSICS LETTERS, 1988, 53 (01) : 51 - 53

[7] PLASMA-ASSISTED EPITAXIAL-GROWTH OF GASB IN HYDROGEN PLASMA [J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 592 - 594

[8] TAKENAKA K, 1979, JPN J APPL PHYS, V19, P765

[9] MOLECULAR-BEAM EPITAXY OF (100)INSB FOR CDTE INSB DEVICE APPLICATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1526 - 1532

[10] YAMUCHI S, 1987, JPN J APPL PHYS, V26, pL893

[1] BETHEA CG, 1987, APPL PHYS LETT, V50, P927

[2] THE PREPARATION OF INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) : 255 - 263

[3] CHIANG PK, 1986, J ELECTROCHEM SOC, V131, P2422

[4] Matsushita K., 1984, Journal of the Vacuum Society of Japan, V27, P569, DOI 10.3131/jvsj.27.569

[5] GROWTH OF SB AND INSB BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7416 - 7420

[6] HETEROEPITAXY OF INSB ON SILICON BY METALORGANIC MAGNETRON SPUTTERING [J]. APPLIED PHYSICS LETTERS, 1988, 53 (01) : 51 - 53

[7] PLASMA-ASSISTED EPITAXIAL-GROWTH OF GASB IN HYDROGEN PLASMA [J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 592 - 594

[8] TAKENAKA K, 1979, JPN J APPL PHYS, V19, P765

[9] MOLECULAR-BEAM EPITAXY OF (100)INSB FOR CDTE INSB DEVICE APPLICATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1526 - 1532

[10] YAMUCHI S, 1987, JPN J APPL PHYS, V26, pL893